Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
STPSC2H065 |
Click to view a larger image
| Part Number | STPSC2H065 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a... |
| Features |
• No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • ECOPACK2 compliant component • Power efficient product Applications • Switch mode power supply • PFC • "DC/DC" converters • LLC topologies • Boost diode Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing p... |
| Document |
 STPSC2H065 Data Sheet
PDF 231.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STPSC2H12 |
STMicroelectronics |
1200V power Schottky silicon carbide diode |
|
| 2 | STPSC2H12-Y |
STMicroelectronics |
2A power Schottky silicon carbide diode |
|
| 3 | STPSC20065-Y |
STMicroelectronics |
power Schottky silicon carbide diode |
|
| 4 | STPSC2006CW |
STMicroelectronics |
600V power Schottky silicon carbide diode |
|
| 5 | STPSC20G12-Y |
STMicroelectronics |
20A power Schottky high surge silicon carbide diode |
|