This application specific Power MOSFET is the third genaration of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This.
H EFFICIENCY DC/DC CONVERTERS ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
TO-220FP INTERNAL SCHEMATIC DIAGRAM
www.DataSheet4U.com
Value TO-220/D2PAK TO-220FP 30 30 ± 16 45 32 180 70 0.46 241 -
– 55 to 175
(1) Starting Tj= 25°C, ID= 22.5A, VDD= 24V
Unit
VDS VDGR VGS ID ID IDM ( ) PTOT EAS (1) Viso Tstg Tj
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Insulation Withstand Volt.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP45NF3LLFP |
ST Microelectronics |
N-Channel POWER MOSFET | |
2 | STP45NF06 |
ST Microelectronics |
N-Channel POWER MOSFET | |
3 | STP45NF06 |
INCHANGE |
N-Channel MOSFET | |
4 | STP45NF06L |
ST Microelectronics |
N-Channel POWER MOSFET | |
5 | STP45N10 |
ST Microelectronics |
N-Channel Power MOS Transistor | |
6 | STP45N10F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
7 | STP45N10F7 |
INCHANGE |
N-Channel MOSFET | |
8 | STP45N10FI |
ST Microelectronics |
N-Channel Power MOS Transistor | |
9 | STP45N40DM2AG |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STP45N60DM2AG |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STP45N60DM6 |
STMicroelectronics |
N-CHANNEL MOSFET | |
12 | STP45N65M5 |
STMicroelectronics |
N-channel Power MOSFET |