STP45NF06L - ST Microelectronics

STP45NF06L N-Channel POWER MOSFET

This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK TO-220 INTERNAL SCHEMATIC DIA.

Features

Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 60 60 ±16 38 26 152 80 0.53 7
  –55 to 175 (1) ISD ≤38A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C (q ) Pulse width limited by safe operating area September 2002 1/10 DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com STP45NF06L - STB45NF06L THERMAL DATA Rthj-case Rthj-amb.