STP45N10FI - ST Microelectronics

STP45N10FI N-Channel Power MOS Transistor

www.DataSheet4U.com ® STP45N10 STP45N10FI N - CHANNEL 100V - 0.027Ω - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR TYPE STP45N10 STP45N10FI V DSS 100 V 100 V R DS(on) < 0.035 Ω < 0.035 Ω ID 45 A 24 A s s s s s s s s TYPICAL RDS(on) = 0.027 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT C.

Features

pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP45N10FI 100 100 ± 25 45 32 180 150 1  -65 to 175 175 24 17 180 45 0.3 2000 Unit V V V A A A W W/ o C V o o C C 1/10 DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com STP45N10/FI THERMAL DATA TO220 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 1 62.5 0.5 300 ISOWATT220 3.33 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ M.