STP45N60DM6 - STMicroelectronics

STP45N60DM6 N-CHANNEL MOSFET

These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) * area with one of the most effective switching behaviors available in the market for the most demanding hig.

Features

Order code VDS RDS(on) max. ID STP45N60DM6 STW45N60DM6 600 V 0.099 Ω 30 A 3 2 1 TO-220 3 2 1 TO-247 Figure 1: Internal schematic diagram
 Fast-recovery body diode
 Lower RDS(on) x area vs previous generation
 Low gate charge, input capacitance and resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected Applications
 Switching applications Order code STP45N60DM6 STW45N60DM6 Description These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines .