STP45N65M5 - STMicroelectronics

STP45N65M5 N-channel Power MOSFET

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applicati.

Features

2 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 Order codes VDSS @ TJmax RDS(on) max ID STB45N65M5 STF45N65M5 710 V 0.078 Ω 35 A STP45N65M5
• Worldwide best RDS(on)
* area
• Higher VDSS rating and high dv/dt capability
• Excellent switching performance
• 100% avalanche tested Figure 1. Internal schematic diagram $4!" ' 3 !-V Applications
• Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layo.