STP45NF06 - ST Microelectronics

STP45NF06 N-Channel POWER MOSFET

This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 2 TO-220 INTERNAL SCHEMATIC DIA.

Features

TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 60 60 ±20 38 26 152 80 0.53 7
  –65 to 175 175 (1) I SD ≤38A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C °C (q) Pulse width limited by safe operating area November 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/6 DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.Dat.