STP45NE06L - ST Microelectronics

STP45NE06L N-Channel POWER MOSFET

This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED.

Features

V GS ID ID I DM (
• ) P tot VISO dv/dt Tstg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 45 31 180 100 0.67  7 -65 to 175 175 (1) ISD ≤ 45 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit 60 60 ± 20 25 17.5 180 35 0.23 2000 V V V A A A W W/ o C V V/ns o o C C .