This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITC.
ID IDM (
• ) P tot V ISO dv/dt T stg Tj June 1998 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o
Unit
STP45NE06FP 60 60 ± 20 V V V 25 17.5 180 35 0.23 2000 7 A A A W W/ o C V V/ns
o o
45 31 180 100 0.67 -65 to 175 175
C C 1/6
(
•) Pulse width limited by safe operating.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP45NE06 |
ST Microelectronics |
N-Channel POWER MOSFET | |
2 | STP45NE06L |
ST Microelectronics |
N-Channel POWER MOSFET | |
3 | STP45NE06LFP |
ST Microelectronics |
N-Channel POWER MOSFET | |
4 | STP45N10 |
ST Microelectronics |
N-Channel Power MOS Transistor | |
5 | STP45N10F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
6 | STP45N10F7 |
INCHANGE |
N-Channel MOSFET | |
7 | STP45N10FI |
ST Microelectronics |
N-Channel Power MOS Transistor | |
8 | STP45N40DM2AG |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STP45N60DM2AG |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STP45N60DM6 |
STMicroelectronics |
N-CHANNEL MOSFET | |
11 | STP45N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STP45NF06 |
ST Microelectronics |
N-Channel POWER MOSFET |