STP4435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, and othe.
25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VGSS ID IDM IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical -30 ±20 -10.0 -7.0 -50 -2.3 2.8 1.8 -55/150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4435.
-30V P-Channel Enhancement Mode MOSFET ■FEATURE The STP4435 is the P-Channel logic enhancement mode power field effect.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP4403 |
STANSON |
P-Channel Enhancement Mode MOSFET | |
2 | STP4407 |
Semtron |
P-Channel Enhancement Mode MOSFET | |
3 | STP4407A |
Semtron |
P-Channel Enhancement Mode MOSFET | |
4 | STP440S |
SamHop Microelectronics |
N-Channel MOSFET | |
5 | STP4410 |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
6 | STP4441 |
STANSON |
P-Channel Enhancement Mode MOSFET | |
7 | STP400N4F6 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STP40N03L-20 |
ST Microelectronics |
N-Channel MOSFET | |
9 | STP40N06 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
10 | STP40N06FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
11 | STP40N10 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
12 | STP40N10FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |