STB4410 STP4410Green Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 100V 75A 7.0 @ VGS=10V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G S S TB S E R IE S .
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G S S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage 100 ±20 ID Drain Current-Continuous c TC=25°C TC=70°C 75 63 IDM -Pulsed a c 390 EAS Avalanche Energy d 576 TC=25°C PD Maximum Power Dissipation TC=70°C 75 52.5 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 THERMAL CHARACTERI.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP4403 |
STANSON |
P-Channel Enhancement Mode MOSFET | |
2 | STP4407 |
Semtron |
P-Channel Enhancement Mode MOSFET | |
3 | STP4407A |
Semtron |
P-Channel Enhancement Mode MOSFET | |
4 | STP440S |
SamHop Microelectronics |
N-Channel MOSFET | |
5 | STP4435 |
Semtron |
-30V P-Channel Enhancement Mode MOSFET | |
6 | STP4435 |
Stanson Technology |
MOSFET | |
7 | STP4441 |
STANSON |
P-Channel Enhancement Mode MOSFET | |
8 | STP400N4F6 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STP40N03L-20 |
ST Microelectronics |
N-Channel MOSFET | |
10 | STP40N06 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
11 | STP40N06FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
12 | STP40N10 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |