Green Product STB/P440S Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 65A R DS(ON) (m Ω) Max 8 @ VGS=10V 11.5 @ VGS=4.5V D G S G .
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 65A R DS(ON) (m Ω) Max 8 @ VGS=10V 11.5 @ VGS=4.5V D G S G D S S TB S E R IE S TO-263(DD-P AK) S TP S E R IE S TO-220 ABSOLUTE Symbol VDS VGS ID IDM EAS PD TJ, TSTG MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy c Maximum Power Dissipation a b a Limit 40 ±20 65 52 191 196 Units V V A A A mJ W W °C TA=25 °C TA=70 °C TA=25 °C TA=70 °C 62.5 40 -55 to .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP4403 |
STANSON |
P-Channel Enhancement Mode MOSFET | |
2 | STP4407 |
Semtron |
P-Channel Enhancement Mode MOSFET | |
3 | STP4407A |
Semtron |
P-Channel Enhancement Mode MOSFET | |
4 | STP4410 |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
5 | STP4435 |
Semtron |
-30V P-Channel Enhancement Mode MOSFET | |
6 | STP4435 |
Stanson Technology |
MOSFET | |
7 | STP4441 |
STANSON |
P-Channel Enhancement Mode MOSFET | |
8 | STP400N4F6 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STP40N03L-20 |
ST Microelectronics |
N-Channel MOSFET | |
10 | STP40N06 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
11 | STP40N06FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
12 | STP40N10 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |