STP400N4F6 - STMicroelectronics

STP400N4F6 N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram $4!" ' 3 !-V Table 1. Device summary Order codes STI400.

Features

N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages Datasheet − preliminary data Order codes STI400N4F6 STP400N4F6 VDSS 40 V RDS(on) max ID < 1.7 mΩ 120 A(1) 1. Limited by package
■ Low gate charge
■ Very low on-resistance
■ High avalanche ruggedness Applications
■ Switching applications Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. TAB TAB 123 I²PAK 3 2 1 TO-220 Figure.