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STP4435 |
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| Part Number | STP4435 |
| Manufacturer | Stanson Technology |
| Description | STP4435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to min... |
| Features |
25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
VGSS ID IDM IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
-30
±20 -10.0 -7.0
-50
-2.3 2.8 1.8 -55/150
-55/150
70
Unit V V A A A W ℃ ℃ ℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4435... |
| Document |
 STP4435 Data Sheet
PDF 591.22KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP4435 |
Semtron |
-30V P-Channel Enhancement Mode MOSFET |
|
| 2 | STP4403 |
STANSON |
P-Channel Enhancement Mode MOSFET |
|
| 3 | STP4407 |
Semtron |
P-Channel Enhancement Mode MOSFET |
|
| 4 | STP4407A |
Semtron |
P-Channel Enhancement Mode MOSFET |
|
| 5 | STP440S |
SamHop Microelectronics |
N-Channel MOSFET |
|