STP40N10FI - STMicroelectronics

STP40N10FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP40N10 STP40N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP40N10 STP40N10FI VDSS 100 V 100 V R DS( on) < 0.04 Ω < 0.04 Ω ID 40 A 22 A s TYPICAL RDS(on) = 0.035 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE s APPLICA.

Features

or VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (
•) Pulse width limited by safe operating area July 1993 Val ue STP40N10 ST P4 0N 10 F I 100 100 ± 20 40 22 28 15 160 160 150 45 1 0.3  2000 -65 to 175 175 Unit V V V A A A W W/oC V oC oC 1/10 STP40N10/FI THERMAL DATA Rthj-case Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-220 1 ISOWATT220 3. 33 6 2. 5 0. 5 300 .