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This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPE.
d) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
o
Value 30 30 ± 20 40 28 160 70 0.46 250 -65 to 175 175
( 1) starting Tj = 25 oC, ID =20A , VDD = 15V
Unit V V V A A A W W /o C m/J
o o
C C
(
•) Pulse width limited by safe operating area
October 1999
1/8
STP40NF03L
THERMAL DATA
R thj -case R thj -amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature F or Soldering Purpose 2.1 62.5 300
o o
C/W C/W o C
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unle.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP40NF10 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 2 | STP40NF10L |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 3 | STP40NF12 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 4 | STP40NF20 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 5 | STP40N03L-20 |
ST Microelectronics |
N-Channel MOSFET |
|
| 6 | STP40N06 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 7 | STP40N06FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 8 | STP40N10 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 9 | STP40N10FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 10 | STP40N20 |
STMicroelectronics |
Low gate charge STripFET Power MOSFET |
|
| 11 | STP40N20 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 12 | STP40N60M2 |
STMicroelectronics |
N-CHANNEL MOSFET |
|