This N-channel 100 V Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility. 3 2 1 TO-220 Figure 1. I.
Order code STP40NF10
VDSS 100 V
RDS(on) max. < 0.028 Ω
ID 50 A
■ Exceptional dv/dt capability
■ Low gate charge
■ 100% avalanche tested
Application
Switching applications
Description
This N-channel 100 V Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility.
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP40NF10L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STP40NF12 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
3 | STP40NF03L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
4 | STP40NF20 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STP40N03L-20 |
ST Microelectronics |
N-Channel MOSFET | |
6 | STP40N06 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
7 | STP40N06FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
8 | STP40N10 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
9 | STP40N10FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
10 | STP40N20 |
STMicroelectronics |
Low gate charge STripFET Power MOSFET | |
11 | STP40N20 |
STMicroelectronics |
N-CHANNEL MOSFET | |
12 | STP40N60M2 |
STMicroelectronics |
N-CHANNEL MOSFET |