This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWIT.
Voltage (RGS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor dv/dt( 1 ) T st g Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction T emperature
o o
Value 30 30 ± 15 40 28 160 80 0.53 7 -65 to 175 175
(1) ISD ≤ 40 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W/ C V/ns
o o o
C C
(
•) Pulse width limited by safe operating area
October 1997
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Free Datasheet http://www.Datasheet4U.com
STP40NE03L-20
THER.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP40N03L-20 |
ST Microelectronics |
N-Channel MOSFET | |
2 | STP40N06 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
3 | STP40N06FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
4 | STP40N10 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
5 | STP40N10FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
6 | STP40N20 |
STMicroelectronics |
Low gate charge STripFET Power MOSFET | |
7 | STP40N20 |
STMicroelectronics |
N-CHANNEL MOSFET | |
8 | STP40N60M2 |
STMicroelectronics |
N-CHANNEL MOSFET | |
9 | STP40N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STP40NF03L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
11 | STP40NF10 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STP40NF10L |
ST Microelectronics |
N-CHANNEL POWER MOSFET |