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* 6 AM01476v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding hig.
Order codes VDS @ TJmax RDS(on) max ID
STB40N60M2 STP40N60M2
650 V
0.088 Ω 34 A
STW40N60M2
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
' 7$%
Applications
• Switching applications
• LLC converters, resonant converters
Description
* 6
AM01476v1
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the comp.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP40N65M2 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 2 | STP40N03L-20 |
ST Microelectronics |
N-Channel MOSFET |
|
| 3 | STP40N06 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 4 | STP40N06FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 5 | STP40N10 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 6 | STP40N10FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 7 | STP40N20 |
STMicroelectronics |
Low gate charge STripFET Power MOSFET |
|
| 8 | STP40N20 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 9 | STP40NE03L-20 |
STMicroelectronics |
N-Channel MOSFET |
|
| 10 | STP40NF03L |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 11 | STP40NF10 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 12 | STP40NF10L |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|