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These devices are N-channel FDmesh™ V Power MOSFETs produced using ST’s MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low on-resistance that is unrivaled among silicon.
Order codes VDS @TJ max. RDS(on) max. ID
STB34NM60ND
STF34NM60ND STP34NM60ND
650 V
0.110 Ω 29 A
STW34NM60ND
• The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche capabilities
Applications
• Switching applications
Description
These devices are N-channel FDmesh™ V Power MOSFETs produced using ST’s MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low on-resista.
STP34NM60ND - INCHANGE
isc N-Channel MOSFET Transistor STP34NM60ND FEATURES ·Drain Current –ID=29A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP34NM60N |
ST Microelectronics |
Power MOSFET |
|
| 2 | STP34NM60N |
INCHANGE |
N-Channel MOSFET |
|
| 3 | STP34N65M5 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | STP34N65M5 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | STP3401 |
Semtron |
P-Channel Enhancement Mode MOSFET |
|
| 6 | STP3401A |
Semtron |
P-Channel Enhancement Mode MOSFET |
|
| 7 | STP3407 |
Semtron |
P-Channel Enhancement Mode MOSFET |
|
| 8 | STP3415 |
Semtron |
P-Channel Enhancement Mode MOSFET |
|
| 9 | STP3467 |
Stanson Technology |
MOSFET |
|
| 10 | STP3467ST6RG |
Stanson Technology |
MOSFET |
|
| 11 | STP3481 |
Stanson Technology |
P Channel Enhancement Mode MOSFET |
|
| 12 | STP300NH02L |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|