STP3481 - Stanson Technology

STP3481 P Channel Enhancement Mode MOSFET

The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and .

Features

ley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 2006. V1 Package TSOP-6P Part Marking 81YA P Channel Enhancement Mode MOSFET STP3481 -5.2A ※ STP3481S6RG S6 : TSOP-6P ; R : Tape Reel ; G : Pb
  – Free ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal www.DataSheet4U.com Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symb.