STP3467ST6RG - Stanson Technology

STP3467ST6RG MOSFET

The STP3467 is the P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and ot.

Features

3467ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb
  – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP3467 2008. V1 STP3467 P Channel Enhancement Mode MOSFET -5.2A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current ID IDM -5.2 -4.2 -20 A A Continuous Source Current (Diode Conduction) IS -1.7 A Power Dissipation Operation Junction Temperature TA=25℃ TA=7.