STP34N65M5 - STMicroelectronics

STP34N65M5 N-channel Power MOSFET

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applicati.

Features

Order codes VDS @ TJmax STB34N65M5 STI34N65M5 STP34N65M5 710 V STW34N65M5 RDS(on) max 0.11 Ω ID 28 A
• Worldwide best RDS(on)
* area
• Higher VDSS rating and high dv/dt capability
• Excellent switching performance
• 100% avalanche tested Applications
• Switching applications ' 3 !-V Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatch.