These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $ ' 3 !-V Table 1. Devic.
Type STF34NM60N STP34NM60N STW34NM60N
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■
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VDSS 600 V 600 V 600 V
RDS(on) max. 0.105 Ω 0.105 Ω 0.105 Ω
ID 29 A 29 A 29 A
PTOT 40 W 210 W 210 W
2 1 3
1 3 2
TO-247
TO-220
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
3 1 2
TO-220FP
Application
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Switching applications Figure 1. Internal schematic diagram
Description
These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate c.
isc N-Channel MOSFET Transistor STP34NM60N FEATURES ·Drain Current –ID=31.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP34NM60ND |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
2 | STP34NM60ND |
INCHANGE |
N-Channel MOSFET | |
3 | STP34N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STP34N65M5 |
INCHANGE |
N-Channel MOSFET | |
5 | STP3401 |
Semtron |
P-Channel Enhancement Mode MOSFET | |
6 | STP3401A |
Semtron |
P-Channel Enhancement Mode MOSFET | |
7 | STP3407 |
Semtron |
P-Channel Enhancement Mode MOSFET | |
8 | STP3415 |
Semtron |
P-Channel Enhancement Mode MOSFET | |
9 | STP3467 |
Stanson Technology |
MOSFET | |
10 | STP3467ST6RG |
Stanson Technology |
MOSFET | |
11 | STP3481 |
Stanson Technology |
P Channel Enhancement Mode MOSFET | |
12 | STP300NH02L |
ST Microelectronics |
N-CHANNEL Power MOSFET |