STP34NM60ND |
Part Number | STP34NM60ND |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor STP34NM60ND FEATURES ·Drain Current –ID=29A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) ·100% avalanche... |
Features |
·Drain Current –ID=29A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 600 V ±25 V 29 A 116 A 19... |
Document |
STP34NM60ND Data Sheet
PDF 271.45KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP34NM60N |
ST Microelectronics |
Power MOSFET | |
2 | STP34NM60N |
INCHANGE |
N-Channel MOSFET | |
3 | STP34NM60ND |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | STP34N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STP34N65M5 |
INCHANGE |
N-Channel MOSFET |