This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. TO-220 TO-220FP INTERNAL SCHEMATIC DIA.
te Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Operating Junction Temperature 16 11 64 45 0.3 23 127 --------55 to 175 2500 60 60 ± 16 11(
*) 7.5(
*) 44(
*) 25 0.17 Value STP16NF06LFP V V V A A A W W/°C V/ns mJ V °C Unit
(
•) Pulse width limited by safe operating area. (
*) Current Limited by package’s thermal resistance
(1) ISD ≤ 16.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP16NF06L |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
2 | STP16NF06 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
3 | STP16NF06 |
INCHANGE |
N-Channel MOSFET | |
4 | STP16NF06FP |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
5 | STP16NF25 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
6 | STP16N10L |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
7 | STP16N50M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
8 | STP16N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STP16N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STP16N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STP16N65M5 |
INCHANGE |
N-Channel MOSFET | |
12 | STP16NB25 |
ST Microelectronics |
N-CHANNEL Power MOSFET |