STP16NF06L - ST Microelectronics

STP16NF06L N-CHANNEL Power MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. TO-220 TO-220FP INTERNAL SCHEMATIC DIA.

Features

te Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Operating Junction Temperature 16 11 64 45 0.3 23 127 --------55 to 175 2500 60 60 ± 16 11(
*) 7.5(
*) 44(
*) 25 0.17 Value STP16NF06LFP V V V A A A W W/°C V/ns mJ V °C Unit (
•) Pulse width limited by safe operating area. (
*) Current Limited by package’s thermal resistance (1) ISD ≤ 16.