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STP16NF06 - ST Microelectronics

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STP16NF06 N-CHANNEL Power MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application.

Features

Type STP16NF06 STP16NF06FP VDSS 60V 60V RDS(on) <0.1Ω <0.1Ω ID 16A 11A
■ Exceptional dv/dt capability
■ Low gate charge at 100°C
■ Application oriented characterization Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications
■ Switching application 3 2 1 TO-220 3 2 1 TO-220FP Internal schematic di.

The same part from a different manufacturer

Datasheet STP16NF06 - INCHANGE STP16NF06

Isc N-Channel MOSFET Transistor ·FEATURES ·Typical RDS(on)=0.08Ω ·With low gate drive requirements ·100% avalanche teste.

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