STP16N50M2 - STMicroelectronics

STP16N50M2 N-CHANNEL POWER MOSFET

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. DS10450 - Rev 6 - December 2018 For further information .

Features

Order code STD16N50M2 STF16N50M2 STP16N50M2 VDS at TJ max. RDS(on) max. 550 V 0.28 Ω
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected ID 13 A Packages DPAK TO-220FP TO-220 Applications
• Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.