STP16N10L - ST Microelectronics

STP16N10L N-CHANNEL Power MOSFET

® STP16N10L N - CHANNEL 100V - 0.14 Ω - 16A - TO-220 POWER MOS TRANSISTOR TYPE STP16N10L s s s s s s s s V DSS 100 V R DS(on) < 0.16 Ω ID 16 A TYPICAL RDS(on) = 0.14 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARAC.

Features

100 ± 15 16 11 64 90 0.4 0.6 -65 to 175 175 Unit V V V A A A W W/ o C V/ns o o C C 1/5 STP16N10L THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1.67 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 50 V) Max Value 16 150 Unit A mJ ELECTRICAL .