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STP1013 |
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| Part Number | STP1013 |
| Manufacturer | Stanson Technology |
| Description | STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-s... |
| Features |
009. V1
STP1013
Dual P Channel Enhancement Mode MOSFET
-0.45A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=80℃
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
Storage Temperature Range
VDSS VGSS
ID
IDM IS PD
TJ TSTG
-20 ±12 -0.45 -0.35 -1.0 -0.3 0.27 0.16 -55/150 -55/150
V V A
A A W
℃ ℃
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.sta... |
| Document |
 STP1013 Data Sheet
PDF 160.09KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP1012 |
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