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STN80T08 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO220-3L FEATURE 80V/40.0A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 p.
nge Thermal Resistance-Junction to Ambient TJ TSTG RθJA 175 -55/175 0.75 ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN80T08 2011. V1 STN80T08 N Channel Enhancement Mode MOSFET 80.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-source OnResistance V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS VDS=0V,VGS=.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STN817 |
ST Microelectronics |
PNP MEDIUM POWER TRANSISTORS |
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| 2 | STN817 |
ST Microelectronics |
PNP MEDIUM POWER TRANSISTORS |
|
| 3 | STN817A |
ST Microelectronics |
PNP MEDIUM POWER TRANSISTOR |
|
| 4 | STN8205A |
STANSON |
Dual N-Channel Enhancement Mode MOSFET |
|
| 5 | STN8205A |
Semtron |
20V N-Channel Enhancement Mode MOSFET |
|
| 6 | STN8205AA |
Stanson |
Dual N Channel Enhancement Mode MOSFET |
|
| 7 | STN8205D |
Stanson |
Dual N Channel Enhancement Mode MOSFET |
|
| 8 | STN826 |
STMicroelectronics |
PNP MEDIUM POWER TRANSISTORS |
|
| 9 | STN83003 |
ST Microelectronics |
High Voltage Fast Switching NPN Power Transistor |
|
| 10 | STN851 |
ST Microelectronics |
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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| 11 | STN851-A |
ST Microelectronics |
low voltage fast-switching NPN power transistor |
|
| 12 | STN878 |
STMicroelectronics |
NPN transistor |
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