The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN83003 is expressly designed for a new solution to be used in compact fluorescent lamps, wh.
■ High voltage capability
■ Very high switching speed
Application
■ Electronics ballasts for fluorescent lighting
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STN93003, its complementary PNP transistor.
4 3
2 1 SOT-223
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Figure 1. Internal schem.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STN80T08 |
Stanson Technology |
MOSFET | |
2 | STN817 |
ST Microelectronics |
PNP MEDIUM POWER TRANSISTORS | |
3 | STN817 |
ST Microelectronics |
PNP MEDIUM POWER TRANSISTORS | |
4 | STN817A |
ST Microelectronics |
PNP MEDIUM POWER TRANSISTOR | |
5 | STN8205A |
STANSON |
Dual N-Channel Enhancement Mode MOSFET | |
6 | STN8205A |
Semtron |
20V N-Channel Enhancement Mode MOSFET | |
7 | STN8205AA |
Stanson |
Dual N Channel Enhancement Mode MOSFET | |
8 | STN8205D |
Stanson |
Dual N Channel Enhancement Mode MOSFET | |
9 | STN826 |
STMicroelectronics |
PNP MEDIUM POWER TRANSISTORS | |
10 | STN851 |
ST Microelectronics |
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
11 | STN851-A |
ST Microelectronics |
low voltage fast-switching NPN power transistor | |
12 | STN878 |
STMicroelectronics |
NPN transistor |