The device is manufactured in planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Marking N851 Package SOT-223 Packaging Tape and reel Order code STN851-A March 2009 Rev 1 1/10 www.st.com 10 Electrical ratings STN851-A 1 www.da.
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AEC Q101 compliant Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting SOT-223 power package in tape and reel
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SOT-223
Applications
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High efficiency low voltage switching applications Figure 1. Internal schematic diagram
Description
The device is manufactured in planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Table 1.
Device summary
Marking N851 Package SOT-223 Packaging Tape and reel
Order code ST.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STN851 |
ST Microelectronics |
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
2 | STN80T08 |
Stanson Technology |
MOSFET | |
3 | STN817 |
ST Microelectronics |
PNP MEDIUM POWER TRANSISTORS | |
4 | STN817 |
ST Microelectronics |
PNP MEDIUM POWER TRANSISTORS | |
5 | STN817A |
ST Microelectronics |
PNP MEDIUM POWER TRANSISTOR | |
6 | STN8205A |
STANSON |
Dual N-Channel Enhancement Mode MOSFET | |
7 | STN8205A |
Semtron |
20V N-Channel Enhancement Mode MOSFET | |
8 | STN8205AA |
Stanson |
Dual N Channel Enhancement Mode MOSFET | |
9 | STN8205D |
Stanson |
Dual N Channel Enhancement Mode MOSFET | |
10 | STN826 |
STMicroelectronics |
PNP MEDIUM POWER TRANSISTORS | |
11 | STN83003 |
ST Microelectronics |
High Voltage Fast Switching NPN Power Transistor | |
12 | STN878 |
STMicroelectronics |
NPN transistor |