The device is manufactured in Planar Technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. 4 3 2 1 SOT-223 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking STN851 N851 March 2009 Package SOT-223 Rev 7 Packaging Tape and reel 1/1.
■ Very low collector to emitter saturation voltage
■ High current gain characteristic
■ Fast-switching speed
Applications
■ Emergency lighting
■ Voltage regulators
■ Relay drivers
■ High efficiency low voltage switching
applications
Description
The device is manufactured in Planar Technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
4 3
2 1
SOT-223
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STN851
N851
March 2009
Package SOT-223
Rev 7
Packaging Tape and reel.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STN851-A |
ST Microelectronics |
low voltage fast-switching NPN power transistor | |
2 | STN80T08 |
Stanson Technology |
MOSFET | |
3 | STN817 |
ST Microelectronics |
PNP MEDIUM POWER TRANSISTORS | |
4 | STN817 |
ST Microelectronics |
PNP MEDIUM POWER TRANSISTORS | |
5 | STN817A |
ST Microelectronics |
PNP MEDIUM POWER TRANSISTOR | |
6 | STN8205A |
STANSON |
Dual N-Channel Enhancement Mode MOSFET | |
7 | STN8205A |
Semtron |
20V N-Channel Enhancement Mode MOSFET | |
8 | STN8205AA |
Stanson |
Dual N Channel Enhancement Mode MOSFET | |
9 | STN8205D |
Stanson |
Dual N Channel Enhancement Mode MOSFET | |
10 | STN826 |
STMicroelectronics |
PNP MEDIUM POWER TRANSISTORS | |
11 | STN83003 |
ST Microelectronics |
High Voltage Fast Switching NPN Power Transistor | |
12 | STN878 |
STMicroelectronics |
NPN transistor |