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STN80T08 |
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| Part Number | STN80T08 |
| Manufacturer | Stanson Technology |
| Description | STN80T08 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO220-3L FEATURE 80V/40.0... |
| Features |
nge Thermal Resistance-Junction to Ambient
TJ TSTG RθJA
175 -55/175
0.75
℃ ℃ ℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
STN80T08 2011. V1
STN80T08
N Channel Enhancement Mode MOSFET
80.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-source OnResistance
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS IDSS
VDS=0V,VGS=... |
| Document |
 STN80T08 Data Sheet
PDF 930.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STN817 |
ST Microelectronics |
PNP MEDIUM POWER TRANSISTORS |
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| 2 | STN817 |
ST Microelectronics |
PNP MEDIUM POWER TRANSISTORS |
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| 3 | STN817A |
ST Microelectronics |
PNP MEDIUM POWER TRANSISTOR |
|
| 4 | STN8205A |
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| 5 | STN8205A |
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