STN878 - STMicroelectronics

STN878 NPN transistor

ObThe devices are manufactured in low voltage NPN -planar technology with “base island” layout. the t(s)resulting transistor shows exceptional high gain performance coupled with very low saturation Obsolete Producvoltage. 4 3 2 1 SOT-223 4 3 1 DPAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes Markings STD878T4 D878 STN878.

Features

■ Very low collector to emitter saturation voltage
■ DC current gain, hFE >100
■ 5 A continuous collector current t(s)Applications uc
■ Power management in portable equipment rod
■ Voltage regulation in bias supply circuits P
■ Switching regulator in battery charger teapplications le
■ Heavy load driver soDescription ObThe devices are manufactured in low voltage NPN -planar technology with “base island” layout. the t(s)resulting transistor shows exceptional high gain performance coupled with very low saturation Obsolete Producvoltage. 4 3 2 1 SOT-223 4 3 1 DPAK Figure 1. Internal schematic di.