STN6N60M2 - STMicroelectronics

STN6N60M2 N-Channel MOSFET

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it S(2) NG1D3S2_SOT223 suitable for the most demanding high efficiency converters. Product status link STN6N60M2 Product s.

Features

Order code VDS STN6N60M2 600 V
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected RDS(on) max. 1.25 Ω ID 5.5 A D(3) Applications
• Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it S(2) NG1D3S2_SOT223 suitable for the most demanding high efficiency converters. Product status link STN6N60M2 P.