cThe device in manufactured in low voltage NPN uplanar technology by using a “Base Island” layout. dThe resulting transistor shows exceptional high rogain performance coupled with very low Obsolete Psaturation voltage. 4 3 2 1 SOT-223 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking STN690A N690A Package SOT-223 Packagi.
■ Very low collector to emitter saturation voltage
■ DC current gain, hFE > 100
■ 3 A continuous collector current
t(s)
■ 40 V breakdown voltage V(BR)CER
■ SOT-223 plastic package for surface mounting
uccircuits in tape and reel packaging rodApplications te P
■ Power management in portable equipment le
■ Voltage regulation in bias supply circuits o
■ Switching regulator in battery charger sapplications Ob
■ Heavy load driver t(s) -Description cThe device in manufactured in low voltage NPN uplanar technology by using a “Base Island” layout. dThe resulting transistor shows exceptional high rogain p.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STN6303 |
Stanson Technology |
MOSFET | |
2 | STN6335 |
Stanson Technology |
MOSFET | |
3 | STN6469 |
SSDI |
UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | |
4 | STN6470 |
SSDI |
UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | |
5 | STN6471 |
SSDI |
UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | |
6 | STN6472 |
SSDI |
UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | |
7 | STN6473 |
SSDI |
UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | |
8 | STN6474 |
SSDI |
UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | |
9 | STN6475 |
SSDI |
UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | |
10 | STN6476 |
SSDI |
UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | |
11 | STN6562 |
Stanson Technology |
MOSFET | |
12 | STN6N60M2 |
STMicroelectronics |
N-Channel MOSFET |