STN6303 - Stanson Technology

STN6303 MOSFET

STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook compute.

Features

Square, Mountain View, Ca 94040 USA http://www.stansontech.com Part Marking 53 STN6303 2008. V1 STN6303 Dual N Channel Enhancement Mode MOSFET 1.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 23 Gate-Source Voltage VGSS +/-20 Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ ID 1.0 0.6 IDM 2.5 Continuous Source Current (Diode Conduction) IS 0.6 Power Dissipation Operation Junction Temperature TA=25℃ TA=70℃ PD 0.35 0.19 TJ -55/150 Storage Temperature Range TSTG -55/150 Thermal Resistanc.