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STN6N60M2 |
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| Part Number | STN6N60M2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized swi... |
| Features |
Order code
VDS
STN6N60M2
600 V
• Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected RDS(on) max. 1.25 Ω ID 5.5 A D(3) Applications • Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it S(2) NG1D3S2_SOT223 suitable for the most demanding high efficiency converters. Product status link STN6N60M2 P... |
| Document |
 STN6N60M2 Data Sheet
PDF 258.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STN6303 |
Stanson Technology |
MOSFET |
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| 2 | STN6335 |
Stanson Technology |
MOSFET |
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| 3 | STN6469 |
SSDI |
UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
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| 4 | STN6470 |
SSDI |
UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
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| 5 | STN6471 |
SSDI |
UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
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