STN6562 - Stanson Technology

STN6562 MOSFET

The STN6562 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management .

Features

6562 2008. V1 STN6562 Dual N Channel Enhancement Mode MOSFET 4.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ ID IDM Continuous Source Current (Diode Conduction) IS Power Dissipation Operation Junction Temperature TA=25℃ TA=70℃ PD TJ Storage Temperature Range TSTG Thermal Resistance-Junction to Ambient T≦10sec Steady State RθJA Typical 30 ±20 4.0 2.0 20 1.7 2.0 1.3 -55/150 -55/150 Unit V V A A A W ℃ ℃ 50 ℃/W STANSON TE.