STN6335 - Stanson Technology

STN6335 MOSFET

STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook compute.

Features

~ z(27~52) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com Part Marking YA STN6335 2008. V1 STN6335 Dual N Channel Enhancement Mode MOSFET 0.95A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V TA=25℃ Continuous Drain Current (TJ=150℃) TA=80℃ Pulsed Drain Current 1.2 A ID 0.9 IDM 4 A Continuous Source Current (Diode Conduction) IS 0.6 A Power Dissipation Operation Junction Temperature TA=25℃ TA=70℃ PD 0.35 W 0.19 TJ -55.