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STN6303 |
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| Part Number | STN6303 |
| Manufacturer | Stanson Technology |
| Description | STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to mini... |
| Features |
Square, Mountain View, Ca 94040 USA http://www.stansontech.com
Part Marking 53
STN6303 2008. V1
STN6303
Dual N Channel Enhancement Mode MOSFET
1.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Drain-Source Voltage
VDSS
23
Gate-Source Voltage
VGSS
+/-20
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
ID 1.0 0.6
IDM 2.5
Continuous Source Current (Diode Conduction) IS 0.6
Power Dissipation Operation Junction Temperature
TA=25℃ TA=70℃
PD 0.35 0.19
TJ -55/150
Storage Temperature Range
TSTG
-55/150
Thermal Resistanc... |
| Document |
 STN6303 Data Sheet
PDF 700.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STN6335 |
Stanson Technology |
MOSFET |
|
| 2 | STN6469 |
SSDI |
UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
|
| 3 | STN6470 |
SSDI |
UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
|
| 4 | STN6471 |
SSDI |
UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
|
| 5 | STN6472 |
SSDI |
UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
|