This N-channel 200 V realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. 2 3 2 1 SOT-223 Figure 1. Internal schematic diagram $ ' Table 1. Device summary Order code STN4N.
Order code STN4NF20L
VDSS 200 V
RDS(on) max.
< 1.5 Ω
■ 100% avalanche tested
■ Low gate charge
■ Exceptional dv/dt capability
ID 1A
Application
Switching applications
Description
This N-channel 200 V realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters.
2 3
2 1
SOT-223
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary Order code STN4NF20L
Marking 4NF20L
3
!-V
Package SOT-223.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STN4NF03L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STN4NF06L |
STMicroelectronics |
Automotive-grade N-channel MOSFET | |
3 | STN4NE03 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
4 | STN4NE03L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STN4102 |
Stanson Technology |
MOSFET | |
6 | STN410D |
Stanson Technology |
MOSFET | |
7 | STN4110 |
Stanson Technology |
MOSFET | |
8 | STN4130 |
Stanson Technology |
MOSFET | |
9 | STN4186D |
Stanson Technology |
MOSFET | |
10 | STN4260 |
STANSON |
N-Channel Enhancement Mode MOSFET | |
11 | STN4346 |
STANSON |
N-Channel Enhancement Mode MOSFET | |
12 | STN4392 |
STANSON |
N-Channel Enhancement Mode MOSFET |