This Power MOSFET has been developed using STMicroelectronics' unique S(3) STripFET process, which is specifically designed to minimize input capacitance and Int_schem_nTnZ_SOT_223 gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and appl.
Order code
VDS
RDS(on) max.
ID
STN4NF06L
60 V
< 0.1 Ω
4A
• AEC-Q101 qualified
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge
Applications
• Switching applications
G(1)
Description
This Power MOSFET has been developed using STMicroelectronics' unique
S(3)
STripFET process, which is specifically designed to minimize input capacitance and
Int_schem_nTnZ_SOT_223 gate charge. This renders the device suitable for use as primary switch in advanced
high-efficiency isolated DC-DC converters for telecom and computer applications,
and applications with low gate .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STN4NF03L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STN4NF20L |
STMicroelectronics |
N-Channel Power MOSFET | |
3 | STN4NE03 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
4 | STN4NE03L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STN4102 |
Stanson Technology |
MOSFET | |
6 | STN410D |
Stanson Technology |
MOSFET | |
7 | STN4110 |
Stanson Technology |
MOSFET | |
8 | STN4130 |
Stanson Technology |
MOSFET | |
9 | STN4186D |
Stanson Technology |
MOSFET | |
10 | STN4260 |
STANSON |
N-Channel Enhancement Mode MOSFET | |
11 | STN4346 |
STANSON |
N-Channel Enhancement Mode MOSFET | |
12 | STN4392 |
STANSON |
N-Channel Enhancement Mode MOSFET |