STN4110 - Stanson Technology

STN4110 MOSFET

STN4110 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE 60V/20.0A, RDS(ON) = 10mΩ (Typ.) @VGS = 10V 60V/20.0A, RDS(ON) = 12mΩ @VGS = 4.5V Sup.

Features

Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 60 ±20 40.0 40.0 180 46 63 31 175 -55/175 16 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STN4110 2010. V1 STN4110 N Channel Enhancement Mode MOSFET 40.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage .