STN4NE03 - ST Microelectronics

STN4NE03 N-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC MOTOR CONTROL (DISK.

Features

-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor dv/dt ( 1) T stg Tj Peak Diode Recovery voltage slope St orage Temperature Max. Operating Junction Temperature (
*) Limited by package o o Value 30 30 ± 20 4 2.5 16 2.5 0.02 6 -65 to 150 150 Uni t V V V A A A W W/ C V/ ns o o o C C (
•) Pulse width limited by safe operating area (1)ISD ≤ 10A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TjMAX August 1998 1/8 STN4NE03 THERMAL DATA R thj -pcb R t hj- amb Tl Thermal Resistance Ju.