STN4130 - Stanson Technology

STN4130 MOSFET

STN4130 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE 60V/20.0A, RDS(ON) = 40mΩ (Typ.) @VGS = 10V 60V/20.0A, RDS(ON) = 50mΩ @VGS = 4.5V Sup.

Features

t TA=25℃ TA=70℃ VGSS ID IDM ±20 20.0 10.0 34 Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ 36 42 25 155 Storgae Temperature Range TSTG -55/155 Thermal Resistance-Junction to Ambient RθJA 13 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN4130 2009. V1 STN4130 N Channel Enhancement Mode MOSFET 20.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage.