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STN4260 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STN4102 |
Stanson Technology |
MOSFET |
|
| 2 | STN410D |
Stanson Technology |
MOSFET |
|
| 3 | STN4110 |
Stanson Technology |
MOSFET |
|
| 4 | STN4130 |
Stanson Technology |
MOSFET |
|
| 5 | STN4186D |
Stanson Technology |
MOSFET |
|
| 6 | STN4346 |
STANSON |
N-Channel Enhancement Mode MOSFET |
|
| 7 | STN4392 |
STANSON |
N-Channel Enhancement Mode MOSFET |
|
| 8 | STN4402 |
Stanson Technology |
MOSFET |
|
| 9 | STN4412 |
Stanson Technology |
MOSFET |
|
| 10 | STN4412S8RG |
Stanson Technology |
MOSFET |
|
| 11 | STN4412S8TG |
Stanson Technology |
MOSFET |
|
| 12 | STN4416 |
Stanson Technology |
MOSFET |
|